Two Electrode Spark Gaps

High Energy Devices, LLC is dedicated to offering protection products to reduce the damaging effects of transients to critical circuits by applying innovative solutions to mitigate the destructive hazards of transient pulses. The versatility of the characteristics of electrical discharge in gases allows HED spark gaps to be utilized in a wide variety of real world high voltage circuit protection and energy transfer applications.

Our Two Electrode Spark Gap products are designed for a wide variety of applications requiring the efficient transfer of high voltage and high energy pulses. Each product series offers unique protection characteristics that make them ideal components when matched with your application requirements. Whether you require nano-second response or millions of operations, one of these products may be the best solution for your needs.

product series envelope type dc breakdown voltage (Nom) datasheet
BX Ceramic 2.0 - 5.0kV
PMT/UMT(275) Ceramic .35 - 2.5kV
PMT(301) Ceramic .35 - 2.5kV
SB/SG Glass .4 - 40.0kV
SIG Glass 2.0 - 4.0kV
TG Two Electrode Legacy Ceramic or Glass .2 - 60.0kV
UBD/UBT/UGT Glass .55 - 20.0kV
BX two electrode spark gap

BX SERIES

The BX Series of miniature two-electrode spark gaps (2.0-20.0kV) has been designed for applications that have severe environment and high reliability requirements. These gaps are made with high alumina (Al2O3)ceramic cylinders and metal electrodes that are hermetically sealed at high braze temperatures to withstand extreme levels of temperature and rugged environmental conditions. The small size of the BX gaps allows alternative mounting methods, including circuit board mounting, as well as external clamping of the ceramic envelope by using low dielectric materials.

PMT Series(275)

PMT/UMT(275) Series

High Energy Devices’ PMT(275) and UMT(275) Series surge protectors (350-500V and 550-2500V respectively) provide a high level of protection from high-speed, high-current transient surges. These devices are constructed using a proprietary semiconductor junction process which results in nanosecond response times combined with peak current ratings in excess of 20kA.

PMT(301) SERIES

PMT SERIES(301)

High Energy Devices’ PMT(301) Series surge protectors (350 – 3500V) provide a high level of
protection from high-speed, high-current transient surges. These devices are constructed using a proprietary semiconductor junction process, which results in nanosecond response times combined with peak current ratings in excess of 20kA

SB/SG two electrode spark gap

SB/SG SERIES

High Energy Devices’ Spark gap line of two-electrode spark gaps excel in applications that require the efficient transfer of high voltage, high energy pulses and DC overvoltage protection for magnetrons, diodes, capacitors, etc. The SB series (.4-5.0kV) can reliably switch pulses having peak currents of several kiloamperes with energy contents as high as 50 joules. The larger SG series (2.0-40.0kV) can reliably switch pulses having peak currents of several kiloamperes and energy contents as high as 100 joules.

SIG SERIES

The Spark Igniter Gap (SIG) Series of hermetically sealed gas discharge tubes are made for extended life applications where high reliability of constant breakdown voltage is needed. Special materials have been used for enhanced electron emission to provide millions of discharges with DC breakdown remaining within tight rated limits. Spark gaps with DC breakdown voltage in the range of 2.0 – 4.0kV are standard. All devices are bipolar and mounting in either direction is optional.

TG two electrode legacy series

TG TWO-ELECTRODE LEGACY SERIES

High Energy Devices’ TG Legacy Series of two-electrode spark gaps excel in applications that require the efficient transfer of high voltage, high energy pulses and DC overvoltage protection for magnetrons, diodes, capacitors, etc.

UBT/UBD/UGT SERIES

UBT/UBD/UGT SERIES

High Energy Devices’ Uni-Imps high-speed transient surge protectors (0.55-20kV) provide the ultimate protection from high-energy, fast-rising transients such as Nuclear EMP. These devices are constructed using a proprietary semiconductor junction process that results in nanosecond response times combined with peak current ratings in the 5-10kA range. A unique benefit of this technology is that the breakdown voltage is virtually independent of the rise time of the transient. In addition, the low capacitance of these devices allows for direct placement on high-frequency lines and antenna feeds without excessive loading.